Record gain at 3.1 GHz of 4H-SiC high power RF MESFET. - Hossein Elahipanah (Microelectron. J., 2011)

Gain improvement and microwave operation of 4H-SiC MESFET with a new recessed metal ring structure. - Hossein Elahipanah; Ali A. Orouji (Microelectron. J., 2012)

Gated base structure for improved current gain in SiC bipolar technology. - B. Gunnar Malm; Hossein Elahipanah; Arash Salemi; Mikael Östling (ESSDERC, 2017)