Two-stage current-reused variable-gain low-noise amplifier for X-band receivers in 65 nm complementary metal oxide semiconductor technology. - Mohammad Reza Nikbakhsh; Ebrahim Abiri; Hossein Ghasemian; Mohammad Reza Salehi (IET Circuits Devices Syst., 2018)

A Two Stage Variable-Gain Low-Noise Amplifier for X-Band in 0.18 µm CMOS. - Mohammad Reza Nikbakhsh; Ebrahim Abiri; Hossein Ghasemian; Mohammad Reza Salehi (Wirel. Pers. Commun., 2018)

A novel high-speed low-power dynamic comparator with complementary differential input in 65 nm CMOS technology. - Hossein Ghasemian; Razieh Ghasemi; Ebrahim Abiri; Mohammad Reza Salehi (Microelectron. J., 2019)

An implementation of a new 11-bit 1.2 ​GS/s hybrid DAC with a noval 3-bit Sub-DAC. - Hossein Ghasemian; Amirhossein Ahmadi; Ebrahim Abiri; Mohammad Reza Salehi (Microelectron. J., 2020)

A New Low-Power Charge Pump with a Glitch-Free PFD for Speedup the Acquisition Process of a PLL in 65 nm CMOS Technology. - Hossein Ghasemian; Amin Bahrami; Ebrahim Abiri; Mohammad Reza Salehi (Circuits Syst. Signal Process., 2021)

Design of a Low Power Analog and Multi-shaped Fully Programmable Twin-Cell Membership Function Generator Circuit in 65 nm CMOS Technology. - Hossein Ghasemian; Saeed Karami; Ebrahim Abiri; Mohammad Reza Salehi (Circuits Syst. Signal Process., 2021)

Efficient and optimized approximate GDI full adders based on dynamic threshold CNTFETs for specific least significant bits. - Ayoub Sadeghi; Razieh Ghasemi; Hossein Ghasemian; Nabiollah Shiri (Frontiers Inf. Technol. Electron. Eng., 2023)

High Efficient GDI-CNTFET-Based Approximate Full Adder for Next Generation of Computer Architectures. - Ayoub Sadeghi; Razieh Ghasemi; Hossein Ghasemian; Nabiollah Shiri (IEEE Embed. Syst. Lett., 2023)