A novel pixel design with hybrid type isolation scheme for low dark current in CMOS image sensor. - Sung Ho Choi; Yi Tae Kim; Min Seok Oh; Younghwan Park; Jeongjin Cho; Youngheup Jang; Hyungjun Han; Jongwon Choi; Howoo Park; Sangil Jung; Hoon Sang Oh; Jung Chak Ahn; et al. (Sensors, Cameras, and Systems for Industrial and Scientific Applications, 2013)

A single chip PPG sensor with enhanced IR sensitivity for low power and small size. - Jungwook Lim; Jihun Kim; Long Yan; Hyunpil Noh; Seungki Jung; Doosik Seol; Junghyung Pyo; Taesub Jung; Jungbin Yun; Dukseo Park; Howoo Park; Kyungho Lee; et al. (Imaging Sensors and Systems, 2021)

7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation. - Jongeun Park; Sungbong Park; Kwansik Cho; Taehun Lee; Changkyu Lee; Donghyun Kim; Beomsuk Lee; SungIn Kim; Ho-Chul Ji; Dongmo Im; Haeyong Park; Jinyoung Kim; et al. (ISSCC, 2021)

All-Directional Dual Pixel Auto Focus Technology in CMOS Image Sensors. - Eun Sub Shim; Kyungho Lee; Junghyung Pyo; Wooseok Choi; Jungbin Yun; Taesub Jung; Kyungduck Lee; Seyoung Kim; Chanhee Lee; Seungki Baek; Hyuncheol Kim; Sungsoo Choi; et al. (VLSI Circuits, 2021)

Advanced novel optical stack technologies for high SNR in CMOS Image Sensor. - Hye Yeon Park; Yunki Lee; Jonghoon Park; Hyunseok Song; Taesung Lee; Hyung Keun Gweon; Yunji Jung; Jeongmin Bae 004; Boseong Kim; Junwon Han; Seungwon Kim; Cheolsang Yoon; et al. (VLSI Technology and Circuits, 2022)

A 0.6 ㎛ Small Pixel for High Resolution CMOS Image Sensor with Full Well Capacity of 10, 000e- by Dual Vertical Transfer Gate Technology. - Jungbin Yun; Seungjoon Lee; Seungwon Cha; Jihun Kim; Jeongho Lee; Hanseok Kim; Eungkyu Lee; Seonok Kim; Seunghan Hong; Hyungchae Kim; Jinsuk Huh; Sungchul Kim; et al. (VLSI Technology and Circuits, 2022)

A 0.64μm 4-Photodiode 1.28μm 50Mpixel CMOS Image Sensor with 0.98e- Temporal Noise and 20Ke- Full-Well Capacity Employing Quarter-Ring Source-Follower. - Hyuncheol Kim; Yun Hyeok Kim; Sanghyuck Moon; Hwanwoong Kim; Byeongjun Yoo; Jueun Park; Seyoung Kim; June-Mo Koo; Sewon Seo; Hye Ji Shin; Younghwan Choi; Jinwoo Kim; et al. (ISSCC, 2023)

A Temporal Noise Reduction via 40% Enhanced Conversion Gain in Dual-Pixel CMOS Image Sensor with Full-Depth Deep-Trench Isolation and Locally Lowered-Stack Technology. - Seunghwan Lee; Jeongjin Cho; Shinyoung Choi; Sung Yoon Min; Eunjung Lee; Minji Jung; Kyoungmok Son; Hyunchaul Jeong; Heetak Han; Sachoun Park; Sanghyuck Moon; Seungki Jung; et al. (VLSI Technology and Circuits, 2024)