High Performance Power MOSFETs by Wing-Cell Structure Design. - Feng-Tso Chien; Chien-Nan Liao; Chi-Ling Wang; Hsien-Chin Chiu (IEICE Trans. Electron., 2006)

A Novel Power MOSFET Structure with Shallow Junction Dual Well Design. - Chien-Nan Liao; Feng-Tso Chien; Chi-Ling Wang; Hsien-Chin Chiu; Yi-Jen Chan (IEICE Trans. Electron., 2007)

Design of training-based mobile receivers for multiuser time-hopping UWB communication systems. - Wei-Chiang Wu; Hsien-Chin Chiu (Mobility Conference, 2008)

A novel complementary Colpitts differential CMOS VCO with low phase noise performance. - Chien-Cheng Wei; Hsien-Chin Chiu; Yi-Tzu Yang; Jeffrey S. Fu (Microelectron. J., 2009)

Electrical and reliability characteristics of GaAs MOSHEMTs utilizing high-k IIIB and IVB oxide layers. - Hsien-Chin Chiu; Chao-Hung Chen; Chih-Wei Yang; Jeffrey S. Fu; Cheng-Shun Wang (Microelectron. Reliab., 2010)

High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using palladium-gate technology. - Hsien-Chin Chiu; Chih-Wei Yang; Chao-Hung Chen; Che-Kai Lin; Jeffrey S. Fu; Hsing-Yuan Tu; Shiang-Feng Tang (Microelectron. Reliab., 2010)

Electromechanical controlled phased array dumbbell EBG beam steerer. - Jeffrey S. Fu; Dong-Hua Yang; Chin-I Yeh; Nemai C. Karmakar; Jui-Ching Cheng; Kuo-Sheng Chin; Hsien-Chin Chiu; Jiankang Xiao (Microelectron. Reliab., 2010)

A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology. - Hsien-Chin Chiu; Chia-Shih Cheng; Hsuan-Ling Kao; Jeffrey S. Fu; Qiang Cui; Juin J. Liou (Microelectron. Reliab., 2011)

High electrical performance liquid-phase HBr oxidation gate insulator of InAlAs/InGaAs metamorphic MOS-mHEMT. - Hsien-Chin Chiu; Chao-Hung Chen; Che-Kai Lin; Jeffrey S. Fu (Microelectron. Reliab., 2011)

Thermal stability investigations of AlGaN/GaN HEMTs with various high work function gate metal designs. - Hsien-Chin Chiu; Chao-Wei Lin; Che-Kai Lin; Hsuan-Ling Kao; Jeffrey S. Fu (Microelectron. Reliab., 2011)

High-k praseodymium oxide passivated AlGaN/GaN MOSFETs using P2S5/(NH4)2SX + UV interface treatment. - Chao-Wei Lin; Hsien-Chin Chiu; Che-Kai Lin; Jeffrey S. Fu (Microelectron. Reliab., 2011)

Ultra-Wideband Circuits, Systems, and Applications. - Yo-Sheng Lin; Baoyong Chi; Hsien-Chin Chiu; Hsiao-Chin Chen (J. Electr. Comput. Eng., 2012)

High thermal stability and low hysteresis dispersion AlGaN/GaN MOS-HEMTs with zirconia film design. - Chao-Hung Chen; Hsien-Chin Chiu; Feng-Tso Chien; Hao-Wei Chuang; Kuo-Jen Chang; Yau-Tang Gau (Microelectron. Reliab., 2012)

Novel GaAs enhancement-mode/depletion-mode pHEMTs technology using high-k praseodymium oxide interlayer. - Chao-Hung Chen; Hsien-Chin Chiu; Chih-Wei Yang; Jeffrey S. Fu; Feng-Tso Chien (Microelectron. Reliab., 2012)

A gold-free fully copper metalized AlGaN/GaN power HEMTs on Si substrate. - Hsien-Chin Chiu; Chao-Wei Lin; Hsuan-Ling Kao; Geng-Yen Lee; Jen-Inn Chyi; Hao-Wei Chuang; Kuo-Jen Chang; Yau-Tang Gau (Microelectron. Reliab., 2012)

Investigation of surface pretreatments on GaAs and memory characteristics of MOS capacitors embedded with Au nano-particles. - Hsien-Chin Chiu; Che-Kai Lin; Chao-Wei Lin; Chao-Sung Lai (Microelectron. Reliab., 2012)

Characterization and reliability of nMOSFETs on flexible substrates under mechanical strain. - Hsuan-Ling Kao; Chih-Sheng Yeh; Meng-Ting Chen; Hsien-Chin Chiu; Li-Chun Chang (Microelectron. Reliab., 2012)

Investigation on the thermal behavior of 0.15 μm gate-length In0.4Al0.6As/In0.4Ga0.6As MHEMT. - Che-Kai Lin; Hsien-Chin Chiu; Chao-Wei Lin; Hsuan-Ling Kao; Feng-Tso Chien (Microelectron. Reliab., 2012)

Design of an S-band 0.35 µm AlGaN/GaN LNA using cascode topology. - Hsuan-Ling Kao; Chih-Sheng Yeh; Cheng-Lin Cho; B. W. Wang; P. C. Lee; B. H. Wei; Hsien-Chin Chiu (DDECS, 2013)

Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis. - Hsien-Chin Chiu; Chao-Hung Chen; Hsuan-Ling Kao; Feng-Tso Chien; Ping-Kuo Weng; Yan-Tang Gau; Hao-Wei Chuang (Microelectron. Reliab., 2013)

Low frequency noise in field-plate multigate AlGaN/GaN single-pole-single-throw RF switches on silicon substrate. - Hsien-Chin Chiu; Chao-Wei Lin; Fan-Hsiu Huang; Hsuan-Ling Kao; Feng-Tso Chien; Hao-Wei Chuang; Kuo-Jen Chang; Yau-Tang Gau (Microelectron. Reliab., 2013)

Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design. - Hsien-Chin Chiu; Hsiang-Chun Wang; Chao-Wei Lin; Yi-Cheng Luo; Hsuan-Ling Kao; Feng-Tso Chien; Ping-Kuo Weng; Yan-Tang Gau; Hao-Wei Chuang (Microelectron. Reliab., 2013)

Device characteristics of AlGaN/GaN MIS-HEMTs with high-k HfxZr1-xO2 (x = 0.66, 0.47, 0.15) insulator layer. - Hsien-Chin Chiu; Chia-Hsuan Wu; Ji-Fan Chi; Feng-Tso Chien (Microelectron. Reliab., 2014)

The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors. - Hsien-Chin Chiu; Wen-Yu Lin; W. J. Hsueh; Pei-Chin Chiu; Yue-Ming Hsin; Jen-Inn Chyi (Microelectron. Reliab., 2015)

N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator. - Hsien-Chin Chiu; Chia-Hsuan Wu; Ji-Fan Chi; Jen-Inn Chyi; Geng-Yen Lee (Microelectron. Reliab., 2015)

The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment. - Hsien-Chin Chiu; Ji-Fan Chi; Hsuan-Ling Kao; Chia-Yi Chu; Kuan-Liang Cho; Feng-Tso Chien (Microelectron. Reliab., 2016)

A high output power and low phase noise GaN HEMT VCO with array of switchable inductors. - Hsuan-Ling Kao; Chih-Sheng Yeh; Hsien-Chin Chiu; Cheng-Lin Cho; Chun-Hu Cheng (Int. J. Circuit Theory Appl., 2017)

Effect of body bias and temperature on low-frequency noise in 40-nm nMOSFETs. - Hsien-Chin Chiu; Min-Li Chou; Chun-Hu Cheng; Hsuan-Ling Kao; Cheng-Lin Cho (Microelectron. Reliab., 2017)

AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers. - Hsien-Chin Chiu; Shang-Cyun Chen; Jiun-Wei Chiu; Bo-Hong Li; Hou-Yu Wang; Li-Yi Peng; Hsiang-Chun Wang; Kuang-Po Hsueh (Microelectron. Reliab., 2018)

Electromagnetic Induced Failure in GaN-HEMT High-Frequency Power Amplifier. - Vivek Sangwan; Cher Ming Tan; Dipesh Kapoor; Hsien-Chin Chiu (IEEE Trans. Ind. Electron., 2020)