$W_{e}=100 mathrm{nm}$ InP/lnGaAs DHBT with Self-aligned MOCVD Regrown p-GaAs Extrinsic Base Exhibiting $1 Omega- mu mathrm{m}^{2}$ Base Contact Resistivity. - Yihao Fang; Hsin-Ying Tseng; Mark J. W. Rodwell (DRC, 2019)

InP MOSFETs Exhibiting Record 70 mV/dec Subthreshold Swing. - Hsin-Ying Tseng; Yihao Fang; Shibo Zhong; Mark J. W. Rodwell (DRC, 2019)

Transistors for 100-300GHz Wireless. - Mark J. W. Rodwell; Brian Markman; Yihao Fang; Logan Whitaker; Hsin-Ying Tseng; Ahmed S. H. Ahmed (ESSDERC, 2021)