A 28nm 1Mb Time-Domain Computing-in-Memory 6T-SRAM Macro with a 6.6ns Latency, 1241GOPS and 37.01TOPS/W for 8b-MAC Operations for Edge-AI Devices. - Ping-Chun Wu; Jian-Wei Su; Yen-Lin Chung; Li-Yang Hong; Jin-Sheng Ren; Fu-Chun Chang; Yuan Wu 009; Ho-Yu Chen; Chen-Hsun Lin; Hsu-Ming Hsiao; Sih-Han Li; Shyh-Shyuan Sheu; et al. (ISSCC, 2022)

A 22nm 832Kb Hybrid-Domain Floating-Point SRAM In-Memory-Compute Macro with 16.2-70.2TFLOPS/W for High-Accuracy AI-Edge Devices. - Ping-Chun Wu; Jian-Wei Su; Li-Yang Hong; Jin-Sheng Ren; Chih-Han Chien; Ho-Yu Chen; Chao-En Ke; Hsu-Ming Hsiao; Sih-Han Li; Shyh-Shyuan Sheu; Wei-Chung Lo; Shih-Chieh Chang; et al. (ISSCC, 2023)

Scalable Embedded Multi-Die Active Bridge (S-EMAB) Chips with Integrated LDOs for Low-Cost Programmable 2.5D/3.5D Packaging Technology. - Wei Lu; Jie Zhang; Yi-Hui Wei; Hsu-Ming Hsiao; Sih-Han Li; Chao-Kai Hsu; Chih-Cheng Hsiao; Feng-Hsiang Lo; Shyh-Shyuan Sheu; Chin-Hung Wang; Wei-Chung Lo; Shih-Chieh Chang; et al. (VLSI Technology and Circuits, 2024)

A Floating-Point 6T SRAM In-Memory-Compute Macro Using Hybrid-Domain Structure for Advanced AI Edge Chips. - Ping-Chun Wu; Jian-Wei Su; Li-Yang Hong; Jin-Sheng Ren; Chih-Han Chien; Ho-Yu Chen; Chao-En Ke; Hsu-Ming Hsiao; Sih-Han Li; Shyh-Shyuan Sheu; Wei-Chung Lo; Shih-Chieh Chang; et al. (IEEE J. Solid State Circuits, 2024)

An 8b-Precision 6T SRAM Computing-in-Memory Macro Using Time-Domain Incremental Accumulation for AI Edge Chips. - Ping-Chun Wu; Jian-Wei Su; Yen-Lin Chung; Li-Yang Hong; Jin-Sheng Ren; Fu-Chun Chang; Yuan Wu 009; Ho-Yu Chen; Chen-Hsun Lin; Hsu-Ming Hsiao; Sih-Han Li; Shyh-Shyuan Sheu; et al. (IEEE J. Solid State Circuits, 2024)