0.18 µm CMOS UWB LNA with new feedback configuration for optimization low noise, high gain and small area. - Y. C. Chang; Hsuan-Ling Kao; C. H. Kao; C. H. Yang; Jeffrey S. Fu; Nemai C. Karmakar; Li-Chun Chang (DDECS, 2009)

A low phase noise 20 GHz voltage control oscillator using 0.18-μm CMOS technology. - Chia-Ming Yang; Hsuan-Ling Kao; Y. C. Chang; M. T. Chen; H. M. Chang; C. H. Wu (DDECS, 2010)

A Ka-band triple push coupled pair VCO using 0.18-μm CMOS technology. - Hsuan-Ling Kao; S. P. Shih; Chih-Sheng Yeh; Chia-Ming Yang; C. Y. Ke; Y. C. Lee; Jeffrey S. Fu; Li-Chun Chang (WOCN, 2011)

A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology. - Hsien-Chin Chiu; Chia-Shih Cheng; Hsuan-Ling Kao; Jeffrey S. Fu; Qiang Cui; Juin J. Liou (Microelectron. Reliab., 2011)

Thermal stability investigations of AlGaN/GaN HEMTs with various high work function gate metal designs. - Hsien-Chin Chiu; Chao-Wei Lin; Che-Kai Lin; Hsuan-Ling Kao; Jeffrey S. Fu (Microelectron. Reliab., 2011)

A low phase noise Ka-band voltage controlled oscillator using 0.15 µm GaAs pHEMT technology. - Hsuan-Ling Kao; S. P. Shih; Chih-Sheng Yeh; Li-Chun Chang (DDECS, 2012)

A gold-free fully copper metalized AlGaN/GaN power HEMTs on Si substrate. - Hsien-Chin Chiu; Chao-Wei Lin; Hsuan-Ling Kao; Geng-Yen Lee; Jen-Inn Chyi; Hao-Wei Chuang; Kuo-Jen Chang; Yau-Tang Gau (Microelectron. Reliab., 2012)

Characterization and reliability of nMOSFETs on flexible substrates under mechanical strain. - Hsuan-Ling Kao; Chih-Sheng Yeh; Meng-Ting Chen; Hsien-Chin Chiu; Li-Chun Chang (Microelectron. Reliab., 2012)

Investigation on the thermal behavior of 0.15 μm gate-length In0.4Al0.6As/In0.4Ga0.6As MHEMT. - Che-Kai Lin; Hsien-Chin Chiu; Chao-Wei Lin; Hsuan-Ling Kao; Feng-Tso Chien (Microelectron. Reliab., 2012)

Design of an S-band 0.35 µm AlGaN/GaN LNA using cascode topology. - Hsuan-Ling Kao; Chih-Sheng Yeh; Cheng-Lin Cho; B. W. Wang; P. C. Lee; B. H. Wei; Hsien-Chin Chiu (DDECS, 2013)

Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis. - Hsien-Chin Chiu; Chao-Hung Chen; Hsuan-Ling Kao; Feng-Tso Chien; Ping-Kuo Weng; Yan-Tang Gau; Hao-Wei Chuang (Microelectron. Reliab., 2013)

Low frequency noise in field-plate multigate AlGaN/GaN single-pole-single-throw RF switches on silicon substrate. - Hsien-Chin Chiu; Chao-Wei Lin; Fan-Hsiu Huang; Hsuan-Ling Kao; Feng-Tso Chien; Hao-Wei Chuang; Kuo-Jen Chang; Yau-Tang Gau (Microelectron. Reliab., 2013)

Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design. - Hsien-Chin Chiu; Hsiang-Chun Wang; Chao-Wei Lin; Yi-Cheng Luo; Hsuan-Ling Kao; Feng-Tso Chien; Ping-Kuo Weng; Yan-Tang Gau; Hao-Wei Chuang (Microelectron. Reliab., 2013)

The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment. - Hsien-Chin Chiu; Ji-Fan Chi; Hsuan-Ling Kao; Chia-Yi Chu; Kuan-Liang Cho; Feng-Tso Chien (Microelectron. Reliab., 2016)

A high output power and low phase noise GaN HEMT VCO with array of switchable inductors. - Hsuan-Ling Kao; Chih-Sheng Yeh; Hsien-Chin Chiu; Cheng-Lin Cho; Chun-Hu Cheng (Int. J. Circuit Theory Appl., 2017)

Effect of body bias and temperature on low-frequency noise in 40-nm nMOSFETs. - Hsien-Chin Chiu; Min-Li Chou; Chun-Hu Cheng; Hsuan-Ling Kao; Cheng-Lin Cho (Microelectron. Reliab., 2017)