Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures. - Zhaoyang Peng; Yiyu Wang; Huajun Shen; Chengzhan Li; Jia Wu; Yun Bai; Kean Liu; Xinyu Liu (Microelectron. Reliab., 2016)

Improved Smartphone-based PDR Localization for Arbitrary Placement. - Huajun Shen; Xiansheng Guo; Huiyong Li 001 (ICCAIS, 2019)