Multiphysics simulation study of thermal stress effects in nanoscale FinFETs heterogeneously integrated with GaN high-power device on silicon substrate. - Huali Duan; Erping Li 001; Qinyi Huang; Yuehang Xu; Wenchao Chen (Microelectron. J., 2024)

Artificial neural network models for metal-ferroelectric-insulator-semiconductor ferroelectric tunnel junction memristor. - Tiancheng Li; Erping Li 001; Huali Duan; Zhufei Chu; Jian Wang; Wenchao Chen (Microelectron. J., 2024)

Theoretical study of carrier transport with quantum confinement effects in GaN HEMT by the Schrödinger-equation modulated drift-diffusion model. - Qinyi Huang; Erping Li 001; Huali Duan; Liang Tian; Hanzhi Ma; Yuehang Xu; Wenchao Chen (Microelectron. J., 2025)