A W-Band 6-Bit Phase Shifter With 7 dB Gain and 1.35° RMS Phase Error in 130 nm SiGe BiCMOS. - Huanbo Li; Jixin Chen; Debin Hou; Wei Hong 002 (IEEE Trans. Circuits Syst. II Express Briefs, 2020)

A 94GHz Scalable 2 × 2 Phased-Array Receiver in SiGe BiCMOS for High Data-Rate Communication. - Huanbo Li; Jixin Chen; Debin Hou; Zekun Li 005; Rui Zhou; Wei Hong 002 (CICC, 2021)

A High-Linearity Adaptive-Bias SiGe Power Amplifier for 5G Communication. - Huanbo Li; Jixin Chen; Debin Hou; Zekun Li 005; Zuojun Wang; Wei Hong 002 (IEEE Trans. Circuits Syst. II Express Briefs, 2021)

A 220 GHz Sliding-IF Quadrature Transmitter With 38-dB Conversion Gain and 8-dBm Psat in 0.13-µm SiGe BiCMOS. - Zekun Li 005; Jixin Chen; Jiayang Yu; Huanbo Li; Zichun Zheng; Rui Zhou; Peigen Zhou; Zhe Chen 021; Wei Hong 002 (CICC, 2022)

A SiGe W-band frequency tripler with 10.5 dBm output power using harmonic suppression technique. - Huanbo Li; Jixin Chen; Peigen Zhou; Debin Hou; Wei Hong 002 (Sci. China Inf. Sci., 2022)

W-band Scalable 2×2 Phased-Array Transmitter and Receiver Chipsets in SiGe BiCMOS for High Data-Rate Communication. - Huanbo Li; Jixin Chen; Debin Hou; Zekun Li 005; Rui Zhou; Zhe Chen 021; Pinpin Yan; Wei Hong 002 (IEEE J. Solid State Circuits, 2022)

A Variable Gain Power Amplifier Based on Switched-Capacitor Array With Stable Linearity. - Long Wang; Jixin Chen; Debin Hou; Huanbo Li; Zekun Li 005; Yu Xiang; Xiaojie Xu; Wei Hong 002 (IEEE Trans. Circuits Syst. II Express Briefs, 2022)

A 220-GHz Sliding-IF Quadrature Transmitter and Receiver Chipset for High Data Rate Communication in 0.13-µm SiGe BiCMOS. - Zekun Li 005; Jixin Chen; Huanbo Li; Jiayang Yu; Yuxiang Lu; Rui Zhou; Zhe Chen 021; Wei Hong 002 (IEEE J. Solid State Circuits, 2023)

A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS. - Jiayang Yu; Jixin Chen; Peigen Zhou; Huanbo Li; Zuojun Wang; Zekun Li 005; Zhe Chen 021; Pinpin Yan; Debin Hou; Hao Gao 001; Wei Hong 002 (IEEE J. Solid State Circuits, 2023)

A W-Band Scalable 1 × 4 Phased-Array Transmitter Front-End with >15/17 dBm OP1dB/Psat in SiGe BiCMOS. - Zongxiang Wang; Jixin Chen; Peigen Zhou; Ziyi Han; Yuyang Xia; Huanbo Li; Zhe Chen; Wei Hong (A-SSCC, 2024)