Gate-All-Around Silicon Nanowire Transistors with channel-last process on bulk Si substrate. - Xiaolong Ma; Huaxiang Yin; Peizhen Hong (IEICE Electron. Express, 2015)

Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment. - Binhong Li; Yang Huang 002; Jianfei Wu; Yunbo Huang; Bo Li 051; Qingzhu Zhang; Ling Yang; Fayu Wan; Jiajun Luo; Zhengsheng Han; Huaxiang Yin (Microelectron. Reliab., 2018)

Process variation dependence of total ionizing dose effects in bulk nFinFETs. - Bo Li 051; Yunbo Huang; Ling Yang; Qingzhu Zhang; Zhongshan Zheng; Binhong Li; Huiping Zhu; Jianhui Bu; Huaxiang Yin; Jiajun Luo; Zhengsheng Han; Haibin Wang (Microelectron. Reliab., 2018)

Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs. - Longda Zhou; Qingzhu Zhang; Hong Yang; Zhigang Ji; Zhaohao Zhang; Renren Xu; Huaxiang Yin; Wenwu Wang 006 (IRPS, 2020)

Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor. - Gangping Yan; Jinshun Bi; Gaobo Xu; Kai Xi; Bo Li 051; Linjie Fan; Huaxiang Yin (IEEE Access, 2020)

Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors. - Guoliang Tian; Jinshun Bi; Gaobo Xu; Kai Xi; Xueqin Yang; Sandip Majumdar; Huaxiang Yin; Qiuxia Xu; Wenwu Wang 006 (Sci. China Inf. Sci., 2020)

Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks. - Hong Yang; Luwei Qi; Yanbo Zhang; Bo Tang; Qianqian Liu; Hao Xu; Xueli Ma; Xiaolei Wang; Yongliang Li; Huaxiang Yin; Junfeng Li; Huilong Zhu; et al. (Sci. China Inf. Sci., 2020)

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs. - Hao Chang; Longda Zhou; Hong Yang; Zhigang Ji; Qianqian Liu; Eddy Simoen; Huaxiang Yin; Wenwu Wang 006 (IRPS, 2021)

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs. - Longda Zhou; Zhaohao Zhang; Hong Yang; Zhigang Ji; Qianqian Liu; Qingzhu Zhang; Eddy Simoen; Huaxiang Yin; Jun Luo; Anyan Du; Chao Zhao; Wenwu Wang 006 (IRPS, 2021)

Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit. - Jiali Huo; Weixing Huang; Fan Zhang; Shengli Zhang; Weizhuo Gan; Qiang Huo; Yuwei Cai; Qingzhu Zhang; Yongliang Li; Huilong Zhu; Huaxiang Yin; Zhenhua Wu (Microelectron. J., 2021)

Prediction of Key Metrics of Stacked Nanosheet nFETs using Genetic Algorithm-based Neural Networks. - Haoqing Xu; Weizhuo Gan; Lei Cao; Huaxiang Yin; Zhenhua Wu (ICTA, 2022)

Investigation on Contacts Thermal Stability for 3D Sequential Integration. - S. J. Mao; J. B. Liu; Y. Wang; W. B. Liu; Y. P. Hu; H. W. Cui; R. Zhang; H. C. Liu; Z. X. Wang; N. Zhou; Y. K. Zhang; Hong Yang; et al. (IRPS, 2022)

Transfer Learning for Improving Seismic Building Damage Assessment. - Qigen Lin; Tianyu Ci; Leibin Wang; Sanjit Kumar Mondal; Huaxiang Yin; Ying Wang (Remote. Sens., 2022)

Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications. - Zhaohao Zhang; Guoliang Tian; Jiali Huo; Fang Zhang; Qingzhu Zhang; Gaobo Xu; Zhenhua Wu; Yan Cheng; Yan Liu; Huaxiang Yin (Sci. China Inf. Sci., 2023)

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing. - Zhaohao Zhang; Guohui Zhan; Weizhuo Gan; Yan Cheng; Xumeng Zhang; Yue Peng; Jianshi Tang; Fan Zhang; Jiali Huo; Gaobo Xu; Qingzhu Zhang; Zhenhua Wu; et al. (Adv. Intell. Syst., 2023)

Investigation on dependency of thermal characteristics on gate/drain bias voltages in stacked nanosheet transistors. - Peng Zhao; Lei Cao; Fan Zhang; Haoqing Xu; Weizhuo Gan; Qingzhu Zhang; Zhaohao Zhang; Jiaxin Yao; Guoliang Tian; Kun Luo; Zhenhua Wu; Huaxiang Yin (Microelectron. J., 2023)

Reversible and Irreversible Polarization Degradation of Hf0.5Zr0.5O2 Capacitors with Coherent Structural Transition at Elevated Temperatures. - Zhaomeng Gao; Tianjiao Xin; Cheng Liu; Yilin Xu; Yiwei Wang; Yunzhe Zheng; Rui Wang; Xiaotian Li; Yonghui Zheng; Kai Du; Diqing Su; Zhaohao Zhang; et al. (IRPS, 2024)

Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs. - Fan Zhang; Zhaohao Zhang; Jiaxin Yao; Qingzhu Zhang; Gaobo Xu; Zhenhua Wu; Huan Liu; Genquan Han; Yan Liu; Huaxiang Yin (Sci. China Inf. Sci., 2024)

Source/drain extension asymmetric counter-doping for suppressing channel leakage in stacked nanosheet transistors. - Qingkun Li; Lei Cao; Qingzhu Zhang; Lianlian Li; Xuexiang Zhang; Chuqiao Niu; Guanqiao Sang; Yunjiao Bao; Huaxiang Yin; Zhenhua Wu (Microelectron. J., 2024)

Trap Behaviors and Degradation Modeling in Positive Bias Temperature Instability of Back Gated IGZO Transistors. - Liang Xiang; Gangping Yan; Yunfei Shi; Hong Yang; Shangbo Yang; Gaobo Xu; Xiaolei Wang; Guilei Wang; Huaxiang Yin; Chao Zhao; Jun Luo; Wenwu Wang 006 (IRPS, 2025)

An AND-type 1T-FeFET array with robust write and read operations. - Jiacheng Xu; Jiayi Zhao; Hongrui Zhang; Haoji Qian; Jiani Gu; Bowen Chen; Gaobo Lin; Rongzong Shen; Xinda Song; Huan Liu; Yian Ding; Minglei Ma; et al. (Sci. China Inf. Sci., 2025)

Stacked gate-all-around nanosheet transistors with full-air-spacers for reducing parasitic capacitance to improve device and circuit performance. - Lianlian Li; Lei Cao; Xuexiang Zhang; Qingkun Li; Zhenhua Wu; Meihe Zhang; Yunjiao Bao; Peng Wang; Renjie Jiang; Anyan Du; Qingzhu Zhang; Huaxiang Yin (Microelectron. J., 2025)

Performance improvement of gate-all-around (GAA) devices by optimized super-steep retrograde well. - Qingkun Li; Qingzhu Zhang; Lei Cao; Lianlian Li; Xuexiang Zhang; Chuqiao Niu; Guanqiao Sang; Yunjiao Bao; Huaxiang Yin; Zhenhua Wu (Microelectron. J., 2025)