A 16Gb LPDDR4X SDRAM with an NBTI-tolerant circuit solution, an SWD PMOS GIDL reduction technique, an adaptive gear-down scheme and a metastable-free DQS aligner in a 10nm class DRAM process. - Ki Chul Chun; Yonggyu Chu; Jin-Seok Heo; Tae-Sung Kim; Soohwan Kim; Hui-Kap Yang; Mi-Jo Kim; Chang-Kyo Lee; Ju-Hwan Kim; Hyunchul Yoon; Chang-Ho Shin; Sang-uhn Cha; et al. (ISSCC, 2018)

A 5Gb/s/pin 16Gb LPDDR4/4X Reconfigurable SDRAM with Voltage-High Keeper and a Prediction-based Fast-tracking ZQ Calibration. - Jin-Seok Heo; Kihan Kim; Dong-Hoon Lee; Chang-Kyo Lee; Daesik Moon; Kiho Kim; Jin-Hyeok Baek; Sung-Woo Yoon; Hui-Kap Yang; Kyungryun Kim; Youngjae Kim; Bokgue Park; et al. (VLSI Circuits, 2019)