Overshoot stress impact on HfO2 high-κ layer dynamic SILC. - Guangxing Wan; Tianli Duan; Shuxiang Zhang; Lingli Jiang; Bo Tang; Chao Zhao 004; Huilong Zhu; Hongyu Yu (ASICON, 2015)

Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer. - Weichun Luo; Hong Yang; Wenwu Wang 006; Yefeng Xu; Bo Tang; Shangqing Ren; Hao Xu; Yanrong Wang; Luwei Qi; Jiang Yan; Huilong Zhu; Chao Zhao; et al. (Microelectron. Reliab., 2016)

Charge pumping test technique using CMOS ring oscillator on leakage issue. - Yongbo Liu; Zhengyong Zhu; Huilong Zhu; Guangxing Wan; Junfeng Li; Chao Zhao (Microelectron. J., 2017)

A novel SEU tolerant memory cell for space applications. - Dianpeng Lin; Yiran Xu; Xiaoyun Li; Xin Xie; Jianwei Jiang 001; Jiangchuan Ren; Huilong Zhu; Zhengxuan Zhang; Shichang Zou (IEICE Electron. Express, 2018)

A novel self-recoverable and triple nodes upset resilience DICE latch. - Dianpeng Lin; Yiran Xu; Xiaoyun Li; Xin Xie; Jianwei Jiang 001; Jiangchuan Ren; Huilong Zhu; Zhengxuan Zhang; Shichang Zou (IEICE Electron. Express, 2018)

A novel highly reliable and low-power radiation hardened SRAM bit-cell design. - Dianpeng Lin; Yiran Xu; Xiaonian Liu; Wenyi Zhu; Lihua Dai; Mengying Zhang; Xiaoyun Li; Xin Xie; Jianwei Jiang 001; Huilong Zhu; Zhengxuan Zhang; Shichang Zou (IEICE Electron. Express, 2018)

Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer. - Xin Xie; Huilong Zhu; Mengying Zhang; Dawei Bi; Zhiyuan Hu; Zhengxuan Zhang; Shichang Zou (IEICE Electron. Express, 2019)

Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks. - Hong Yang; Luwei Qi; Yanbo Zhang; Bo Tang; Qianqian Liu; Hao Xu; Xueli Ma; Xiaolei Wang; Yongliang Li; Huaxiang Yin; Junfeng Li; Huilong Zhu; et al. (Sci. China Inf. Sci., 2020)

The Investigation of Negative Capacitance Vertical Nanowire FETs Based on SPICE Model at Device-Circuit Level. - Weixing Huang; Huilong Zhu; Kunpeng Jia; Zhenhua Wu; Xiaogen Yin; Qiang Huo; Yongkui Zhang (CoRR, 2020)

Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET. - Huilong Zhu; Dawei Bi; Xin Xie; Zhiyuan Hu; Zhengxuan Zhang; Shichang Zou (IEICE Electron. Express, 2020)

Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits. - Weixing Huang; Huilong Zhu; Yongkui Zhang; Zhenhua Wu; Kunpeng Jia; Xiaogen Yin; Yangyang Li; Chen Li; Xuezheng Ai; Qiang Huo; Junfeng Li (Microelectron. J., 2021)

Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit. - Jiali Huo; Weixing Huang; Fan Zhang; Shengli Zhang; Weizhuo Gan; Qiang Huo; Yuwei Cai; Qingzhu Zhang; Yongliang Li; Huilong Zhu; Huaxiang Yin; Zhenhua Wu (Microelectron. J., 2021)

Data Augmentation Algorithm Based on Local Dynamic Transformation. - Huilong Zhu; Jing Zhang; Li Hu; Chenghao Li; Maomao Shan; Qiyu Duan (AIIPCC, 2022)

In-and-Out: a data augmentation technique for computer vision tasks. - Chenghao Li; Jing Zhang; Li Hu; Hao Zhao 003; Huilong Zhu; Maomao Shan (J. Electronic Imaging, 2022)

On the SRAM with comb-shaped nano FETs advancing to 3 nm node and beyond. - Xinhao Li; Huilong Zhu; Zhenzhen Kong; Qi Wang 041; Yongkui Zhang; Zhenhua Wu (Microelectron. J., 2023)