Model selection via reweighted partial sparse recovery. - Xiaofan Lu; Huimei Ma; Linan Zhang (J. Comput. Appl. Math., 2024)

Al2O3/AlN/GaN MOS-HEMTs on 6-inch silicon substrate with high transconductance and state-of-the-art fmax × LG. - Lingjie Qin; Jiejie Zhu; Bowen Zhang; Yuxi Zhou; Huantao Duan; Huimei Ma; Mengdi Li; Simei Huang; Jin Rao; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2025)