Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor. - Miaomiao Wang 006; Jingyun Zhang; Huimei Zhou; Richard G. Southwick; Robin Hsin Kuo Chao; Xin Miao; Veeraraghavan S. Basker; Tenko Yamashita; Dechao Guo; Gauri Karve; Huiming Bu; James H. Stathis (IRPS, 2019)

Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs. - Nilotpal Choudhury; Uma Sharma; Huimei Zhou; Richard G. Southwick; Miaomiao Wang 006; Souvik Mahapatra (IRPS, 2020)

A new technique for evaluating stacked nanosheet inner spacer TDDB reliability. - Tian Shen; Koji Watanabe; Huimei Zhou; Michael Belyansky; Erin Stuckert; Jingyun Zhang; Andrew Greene; Veeraraghavan S. Basker; Miaomiao Wang 006 (IRPS, 2020)

NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor. - Huimei Zhou; Miaomiao Wang 006; Jingyun Zhang; Koji Watanabe; Curtis Durfee; Shogo Mochizuki; Ruqiang Bao; Richard G. Southwick; Maruf Bhuiyan; Basker Veeraraghavan (IRPS, 2020)

Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs. - Nilotpal Choudhury; Tarun Samadder; Ravi Tiwari; Huimei Zhou; Richard G. Southwick; Miaomiao Wang 006; Souvik Mahapatra (IRPS, 2021)

TDDB Reliability in Gate-All-Around Nanosheet. - Huimei Zhou; Miaomiao Wang 006; Ruqiang Bao; Tian Shen; Ernest Y. Wu; Richard G. Southwick; Jingyun Zhang; Veeraraghavan S. Basker; Dechao Guo (IRPS, 2021)

SiGe Gate-All-around Nanosheet Reliability. - Huimei Zhou; Miaomiao Wang 006; Ruqiang Bao; Curtis Durfee; Liqiao Qin; Jingyun Zhang (IRPS, 2022)

Impact of Gate Stack Thermal Budget on NBTI Reliability in Gate-All-Around Nanosheet P-type Devices. - Huimei Zhou; Miaomiao Wang 006; Nicolas Loubet; Andrew Gaul; Yasir Sulehria (IRPS, 2023)

A New Clustering-Function-Based Formulation of Temporal and Spatial Clustering Model Involving Area Scaling and its Application to Parameter Extraction. - Ernest Y. Wu; Brian T. McGowan; Ronald Bolam; Huai Huang; Huimei Zhou; Miaomiao Wang 006 (IRPS, 2024)

Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further Scaling. - Huimei Zhou; Miaomiao Wang 006; Ernest Y. Wu (IRPS, 2024)

Backside Power Distribution for Nanosheet Technologies Beyond 2nm. - Ruilong Xie; Wonhyuk Hong; Chen Zhang; Jongjin Lee; Kevin Brew; Richard Johnson; Nicholas A. Lanzillo; Hosadurga Shobha; Taesun Kim; Panjae Park; Shogo Mochizuki; Iqbal Saraf; et al. (VLSI Technology and Circuits, 2024)