Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering. - Huiseong Han; Shun'ichiro Ohmi (IEICE Electron. Express, 2012)

Impact of Si surface roughness on MOSFET characteristics with ultrathin HfON gate insulator formed by ECR plasma sputtering. - Dae-Hee Han; Huiseong Han; Shun'ichiro Ohmi (IEICE Electron. Express, 2013)