A Nonvolatile Al-Edge Processor with 4MB SLC-MLC Hybrid-Mode ReRAM Compute-in-Memory Macro and 51.4-251TOPS/W. - Wei-Hsing Huang; Tai-Hao Wen; Je-Min Hung; Win-San Khwa; Yun-Chen Lo; Chuan-Jia Jhang; Hung-Hsi Hsu; Yu-Hsiang Chin; Yu-Chiao Chen; Chuna-Chuan Lo; Ren-Shuo Liu; Kea-Tiong Tang; et al. (ISSCC, 2023)

Challenges in Circuits of Nonvolatile Compute-In-Memory for Edge AI Chips. - Hung-Hsi Hsu; Tai-Hao Wen; Ping-Chun Wu; Chuan-Jia Jhang; De-Qi You; Ping-Cheng Chen; Meng-Fan Chang (MWSCAS, 2023)

A 28nm Nonvolatile AI Edge Processor using 4Mb Analog-Based Near-Memory-Compute ReRAM with 27.2 TOPS/W for Tiny AI Edge Devices. - Tai-Hao Wen; Je-Min Hung; Hung-Hsi Hsu; Yuan Wu 009; Fu-Chun Chang; Chung-Yuan Li; Chih-Han Chien; Chin-I Su; Win-San Khwa; Jui-Jen Wu; Chung-Chuan Lo; Ren-Shuo Liu; et al. (VLSI Technology and Circuits, 2023)

34.8 A 22nm 16Mb Floating-Point ReRAM Compute-in-Memory Macro with 31.2TFLOPS/W for AI Edge Devices. - Tai-Hao Wen; Hung-Hsi Hsu; Win-San Khwa; Wei-Hsing Huang; Zhao-En Ke; Yu-Hsiang Chin; Hua-Jin Wen; Yu-Chen Chang; Wei-Ting Hsu; Chung-Chuan Lo; Ren-Shuo Liu; Chih-Cheng Hsieh; et al. (ISSCC, 2024)

A Nonvolatile AI-Edge Processor With SLC-MLC Hybrid ReRAM Compute-in-Memory Macro Using Current-Voltage-Hybrid Readout Scheme. - Hung-Hsi Hsu; Tai-Hao Wen; Wei-Hsing Huang; Win-San Khwa; Yun-Chen Lo; Chuan-Jia Jhang; Yu-Hsiang Chin; Yu-Chiao Chen; Chung-Chuan Lo; Ren-Shuo Liu; Kea-Tiong Tang; Chih-Cheng Hsieh; et al. (IEEE J. Solid State Circuits, 2024)

A 22 nm Floating-Point ReRAM Compute-in-Memory Macro Using Residue-Shared ADC for AI Edge Device. - Hung-Hsi Hsu; Tai-Hao Wen; Win-San Khwa; Wei-Hsing Huang; Zhao-En Ke; Yu-Hsiang Chin; Hua-Jin Wen; Yu-Chen Chang; Wei-Ting Hsu; Ashwin Sanjay Lele; Bo Zhang; Ping-Sheng Wu; et al. (IEEE J. Solid State Circuits, 2025)