A low-noise voltage-controlled ring oscillator in 28-nm FDSOI technology. - Hussein Bazzi; Mohammad Abou Chanine; Ali Mohsen; Adnan Harb (ICM, 2017)

Novel RRAM CMOS Non-Volatile Memory Cells in 130nm Technology. - Hussein Bazzi; Adnan Harb; Hassen Aziza; Mathieu Moreau (ICCA, 2018)

Design of Hybrid CMOS Non-Volatile SRAM Cells in 130nm RRAM Technology. - Hussein Bazzi; Adnan Harb; Hassen Aziza; Mathieu Moreau (ICM, 2018)

An Augmented OxRAM Synapse for Spiking Neural Network (SNN) Circuits. - Hassen Aziza; Hussein Bazzi; Jérémy Postel-Pellerin; Pierre Canet; Mathieu Moreau; Adnan Harb (DTIS, 2019)

True random number generation exploiting SET voltage variability in resistive RAM memory arrays. - Jérémy Postel-Pellerin; Hussein Bazzi; Hassen Aziza; Pierre Canet; Mathieu Moreau; Vincenzo Della Marca; Adnan Harb (NVMTS, 2019)

Resistive RAM SET and RESET Switching Voltage Evaluation as an Entropy Source for Random Number Generation. - Hussein Bazzi; Jérémy Postel-Pellerin; Hassen Aziza; Mathieu Moreau; Adnan Harb (DFT, 2020)

Design of a Novel Hybrid CMOS Non-Volatile SRAM Memory in 130nm RRAM Technology. - Hussein Bazzi; Hassen Aziza; Mathieu Moreau; Adnan Harb (DTIS, 2020)

Performances and Stability Analysis of a Novel 8T1R Non-Volatile SRAM (NVSRAM) versus Variability. - Hussein Bazzi; Hassen Aziza; Mathieu Moreau; Adnan Harb (J. Electron. Test., 2021)

STATE: A Test Structure for Rapid Prediction of Resistive RAM Electrical Parameter Variability. - Hassen Aziza; Jérémy Postel-Pellerin; Hussein Bazzi; Mathieu Moreau; Adnan Harb (ISCAS, 2022)