A 1.2V 30nm 1.6Gb/s/pin 4Gb LPDDR3 SDRAM with input skew calibration and enhanced control scheme. - Yong-Cheol Bae; Joon-Young Park; Sang Jae Rhee; Seung-Bum Ko; Yonggwon Jeong; Kwang-Sook Noh; Young Hoon Son; Jaeyoun Youn; Yonggyu Chu; Hyunyoon Cho; Mijo Kim; Daesik Yim; et al. (ISSCC, 2012)

22.2 An 8.5Gb/s/pin 12Gb-LPDDR5 SDRAM with a Hybrid-Bank Architecture using Skew-Tolerant, Low-Power and Speed-Boosting Techniques in a 2nd generation 10nm DRAM Process. - Hyung-Joon Chi; Chang-Kyo Lee; Junghwan Park; Jin-Seok Heo; Jaehoon Jung; Dongkeon Lee; Dae-Hyun Kim 003; Dukha Park; Kihan Kim; Sang-Yun Kim 001; Jinsol Park; Hyunyoon Cho; et al. (ISSCC, 2020)

22.1 A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme. - Chi-Sung Oh; Ki Chul Chun; Young-Yong Byun; Yong-Ki Kim; So-Young Kim; Yesin Ryu; Jaewon Park; Sinho Kim; Sang-uhn Cha; Dong-Hak Shin; Jungyu Lee 002; Jong-Pil Son; et al. (ISSCC, 2020)

25.2 A 16Gb Sub-1V 7.14Gb/s/pin LPDDR5 SDRAM Applying a Mosaic Architecture with a Short-Feedback 1-Tap DFE, an FSS Bus with Low-Level Swing and an Adaptively Controlled Body Biasing in a 3rd-Generation 10nm DRAM. - Yong-Hun Kim; Hyung-Jin Kim; Jaemin Choi; Min-Su Ahn; Dongkeon Lee; Seung-Hyun Cho; Dong-Yeon Park; Young-Jae Park; Min-Soo Jang; Yong-Jun Kim; Jinyong Choi; Sung-Woo Yoon; et al. (ISSCC, 2021)

An 8.5-Gb/s/Pin 12-Gb LPDDR5 SDRAM With a Hybrid-Bank Architecture, Low Power, and Speed-Boosting Techniques. - Chang-Kyo Lee; Hyung-Joon Chi; Jin-Seok Heo; Junghwan Park; Jin-Hun Jang; Dongkeon Lee; Jaehoon Jung; Dong-Hun Lee; Dae-Hyun Kim 003; Kihan Kim; Sang-Yun Kim 001; Dukha Park; et al. (IEEE J. Solid State Circuits, 2021)

13.2 A 32Gb 8.0Gb/s/pin DDR5 SDRAM with a Symmetric-Mosaic Architecture in a 5th-Generation 10nm DRAM Process. - IkJoon Choi; Seunghwan Hong; Kihyun Kim; Jeongsik Hwang; Seunghan Woo; Young-Sang Kim; Cheongryong Cho; Eun-Young Lee; Hun-Jae Lee; Min-Su Jung; Hee-Yun Jung; Ju-Seong Hwang; et al. (ISSCC, 2024)