A 1.1V 2y-nm 4.35Gb/s/pin 8Gb LPDDR4 mobile device with bandwidth improvement techniques. - Keunsoo Song; Sangkwon Lee; Dongkyun Kim; Youngbo Shim; Sangil Park; Bokrim Ko; Duckhwa Hong; Yongsuk Joo; Wooyoung Lee; Yongdeok Cho; Wooyeol Shin; Jaewoong Yun; et al. (CICC, 2014)

A 0.02mm2 embedded temperature sensor with ±2°C inaccuracy for self-refresh control in 25nm mobile DRAM. - Yeo Myung Kim; Woojun Choi; Jaehoon Kim; Sanghoon Lee 009; Sangho Lee; Hyeongon Kim; Kofi A. A. Makinwa; Youngcheol Chae; Tae Wook Kim (ESSCIRC, 2015)

A 1.1 V 2y-nm 4.35 Gb/s/pin 8 Gb LPDDR4 Mobile Device With Bandwidth Improvement Techniques. - Keunsoo Song; Sangkwon Lee; Dongkyun Kim; Youngbo Shim; Sangil Park; Bokrim Ko; Duckhwa Hong; Yongsuk Joo; Wooyoung Lee; Yongdeok Cho; Wooyeol Shin; Jaewoong Yun; et al. (IEEE J. Solid State Circuits, 2015)

23.5 A 4Gb LPDDR2 STT-MRAM with compact 9F2 1T1MTJ cell and hierarchical bitline architecture. - Kwangmyoung Rho; Kenji Tsuchida; Dongkeun Kim; Yutaka Shirai; Jihyae Bae; Tsuneo Inaba; Hiromi Noro; Hyunin Moon; Sungwoong Chung; Kazumasa Sunouchi; Jinwon Park; Kiseon Park; et al. (ISSCC, 2017)