Novel Deep Trench Buried-Body-Contact (DBBC) of 4F2 cell for sub 30nm DRAM technology. - Youngseung Cho; Yoosang Hwang; Huijung Kim; Eunok Lee; Soojin Hong; Hyun-Woo Chung; Daeik Kim; Jinyoung Kim; Yong Chul Oh; Hyeongsun Hong; Gyo-Young Jin; Chilhee Chung (ESSDERC, 2012)

The improvement of HEIP immunity using STI engineering at DRAM. - Seung Uk Han; Youngyoun Lee; Yongdoo Kim; Jemin Park; Junhee Lim; Satoru Yamada; Hyeongsun Hong; Kyupil Lee; Gyoyoung Jin; Eunseung Jung (Microelectron. Reliab., 2017)

5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology. - Hyunchul Kim; Jongeun Park; Insung Joe; Doowon Kwon; Joo Hyoung Kim; Dongsuk Cho; Taehun Lee; Changkyu Lee; Haeyong Park; Soojin Hong; Chongkwang Chang; Jingyun Kim; et al. (ISSCC, 2020)

5.5 A 2.1e- Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology. - Jaekyu Lee; Seung Sik Kim; In-Gyu Baek; Heesung Shim; Taehoon Kim; Taehyoung Kim; Jungchan Kyoung; Dongmo Im; Jinyong Choi; KeunYeong Cho; Daehoon Kim; Haemin Lim; et al. (ISSCC, 2020)