Fault isolation of short defect in through silicon via (TSV) based 3D-IC. - Daniel H. Jung; Jonghyun Cho; Heegon Kim; Jonghoon J. Kim; Hongseok Kim; Joungho Kim; Hyun-Cheol Bae; Kwang-Seong Choi (3DIC, 2013)

Modeling and analysis of open defect in through silicon via (TSV) channel. - Daniel H. Jung; Heegon Kim; Jonghoon J. Kim; Joungho Kim; Hyun-Cheol Bae; Kwang-Seong Choi (EMC Compo, 2013)

Fault detection and isolation of multiple defects in through silicon via (TSV) channel. - Daniel H. Jung; Heegon Kim; Jonghoon J. Kim; Sukjin Kim; Joungho Kim; Hyun-Cheol Bae; Kwang-Seong Choi (3DIC, 2014)

Modeling and analysis of defects in through silicon via channel for non-invasive fault isolation. - Daniel H. Jung; Heegon Kim; Jonghoon J. Kim; Sukjin Kim; Joungho Kim; Hyun-Cheol Bae; Kwang-Seong Choi (3DIC, 2015)

Evaluating the material properties of underfill for a reliable 3D TSV integration package using numerical analysis. - Hyungseok Yoon; Kwang-Seong Choi; Hyun-Cheol Bae; Jong-Tae Moon; Yong-Sung Eom; Insu Jeon (Microelectron. Reliab., 2017)