Systematical study of 14nm FinFET reliability: From device level stress to product HTOL. - Changze Liu; Hyun-Chul Sagong; Hyejin Kim; Seungjin Choo; Hyunwoo Lee; Yoohwan Kim; Hyunjin Kim; Bisung Jo; Minjung Jin; Jinjoo Kim; Sangsu Ha; Sangwoo Pae; et al. (IRPS, 2015)

Reliability characterization of advanced CMOS image sensor (CIS) with 3D stack and in-pixel DTI. - Younggeun Ji; Jeonghoon Kim; Jungin Kim; Miji Lee; Jaeheon Noh; Taeyoung Jeong; Juhyeon Shin; Junho Kim; Young Heo; Ung Cho; Hyun-Chul Sagong; Junekyun Park; et al. (IRPS, 2018)

A systematic study of gate dielectric TDDB in FinFET technology. - Hyunjin Kim; Minjung Jin; Hyun-Chul Sagong; Jinju Kim; Ukjin Jung; Minhyuck Choi; Junekyun Park; Sangchul Shin; Sangwoo Pae (IRPS, 2018)

Effects of Far-BEOL anneal on the WLR and product reliability characterization of FinFET process technology. - Hyun-Chul Sagong; Hyunjin Kim; Seungjin Choo; Sungyoung Yoon; Hyewon Shim; Sangsu Ha; Tae-Young Jeong; Minhyeok Choe; Junekyun Park; Sangchul Shin; Sangwoo Pae (IRPS, 2018)

Investigation of alpha-induced single event transient (SET) in 10 nm FinFET logic circuit. - Taiki Uemura; Soonyoung Lee; Dahye Min; Ihlhwa Moon; Jungman Lim; Seungbae Lee; Hyun-Chul Sagong; Sangwoo Pae (IRPS, 2018)

Localized Layout Effect Related Reliability Approach in 8nm FinFETs Technology: From Transistor to Circuit. - Hai Jiang 005; Hyun-Chul Sagong; Jinju Kim; Junekyun Park; Sangchul Shin; Sangwoo Pae (IRPS, 2019)

Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology. - Hai Jiang 005; Hyun-Chul Sagong; Jinju Kim; Hyewon Shim; Yoohwan Kim; Junekyun Park; Taiki Uemura; Yongsung Ji; Taeyoung Jeong; Dongkyun Kwon; Hwasung Rhee; Sangwoo Pae; et al. (IRPS, 2020)

Trap Density Modulation for IO FinFET NBTI Improvement. - Rakesh Ranjan; Charles B. LaRow; Ki-Don Lee; Minhyo Kang; Pavitra R. Perepa; Md. Shahriar Rahman; Bong Ki Lee; David Moreau; Carolyn Cariss-Daniels; Timothy Basford; Colby Callahan; Maihan Nguyen; et al. (IRPS, 2020)

Time Dependent Variability in Advanced FinFET Technology for End-of-Lifetime Reliability Prediction. - Hai Jiang 005; Jinju Kim; Kihyun Choi; Hyewon Shim; Hyunchul Sagong; Junekyun Park; Hwasung Rhee; Euncheol Lee (IRPS, 2021)

Systematic Study of Process Impact on FinFET Reliability. - Rakesh Ranjan; Ki-Don Lee; Md Iqbal Mahmud; Mohammad Shahriar Rahman; Pavitra Ramadevi Perepa; Charles Briscoe LaRow; Caleb Dongkyun Kwon; Maihan Nguyen; Minhyo Kang; Ashish Kumar Jha 005; Ahmed Shariq; Shamas Musthafa Ummer; et al. (IRPS, 2021)

Prediction of Internal Temperature of Starter Solenoid Via PoF-Based Fault Reproduction Experiment. - Sanghoon Lee; Dabin Yang; Sanghak Lee; Hyunchul Sagong; Jongsoo Lee (IEEE Trans. Instrum. Meas., 2023)

Mitigation of Single Event Upset Effects in Nanosheet FET 6T SRAM Cell. - Minji Bang; Jonghyeon Ha; Minki Suh; Dabok Lee; Minsang Ryu; Jin-Woo Han; Hyunchul Sagong; Hojoon Lee; Jungsik Kim (IEEE Access, 2024)

Comprehensive Hammering and Parasitic BJT Effects in Vertically Stacked DRAM. - Minki Suh; Minsang Ryu; Jonghyeon Ha; Minji Bang; Dabok Lee; Hojoon Lee; Hyunchul Sagong; Jungsik Kim (IEEE Access, 2024)

Analysis of Failure Mechanism and Reliability Enhancement of Silicon Strain Gauge-Based Pressure Sensor for Automotive Applications. - Hyunchul Sagong; Seongcheol Jeong; Hojoon Lee (Sensors, 2024)

Soft Error in Saddle Fin-Based DRAM at Cryogenic Temperature. - Minsang Ryu; Minki Suh; Jonghyeon Ha; Minji Bang; Dabok Lee; Hojoon Lee; Hyunchul Sagong; Dong-Seok Kim; Jungsik Kim (IEEE Access, 2025)