Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance. - Seongjae Cho; Hyungjin Kim 001; Min-Chul Sun; In Man Kang; Byung-Gook Park; James S. Harris Jr. (IEICE Electron. Express, 2012)

Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using VT-Control Doping Region. - Hyungjin Kim 001; Min-Chul Sun; Hyun Woo Kim 005; Sang Wan Kim; Garam Kim; Byung-Gook Park (IEICE Trans. Electron., 2012)

Novel Three Dimensional (3D) NAND Flash Memory Array Having Tied Bit-line and Ground Select Transistor (TiGer). - Se Hwan Park; Yoon Kim; Wandong Kim; Joo Yun Seo; Hyungjin Kim 001; Byung-Gook Park (IEICE Trans. Electron., 2012)

Effects of Conductive Defects on Unipolar RRAM for the Improvement of Resistive Switching Characteristics. - Kyung-Chang Ryoo; Jeong-Hoon Oh; Sunghun Jung; Hyungjin Kim 001; Byung-Gook Park (IEICE Trans. Electron., 2012)

Comparative Study on Top- and Bottom-Source Vertical-Channel Tunnel Field-Effect Transistors. - Min-Chul Sun; Hyun Woo Kim 005; Sang Wan Kim; Garam Kim; Hyungjin Kim 001; Byung-Gook Park (IEICE Trans. Electron., 2012)

Novel Tunneling Field-Effect Transistor with Sigma-Shape Embedded SiGe Sources and Recessed Channel. - Min-Chul Sun; Sang Wan Kim; Garam Kim; Hyun Woo Kim 005; Hyungjin Kim 001; Byung-Gook Park (IEICE Trans. Electron., 2013)

Towards the Development of Analog Neuromorphic Chip Prototype with 2.4M Integrated Memristors. - Irina Kataeva; Shigeki Ohtsuka; Hussein Nili; Hyungjin Kim 001; Yoshihiko Isobe; Koichi Yako; Dmitri B. Strukov (ISCAS, 2019)

4K-Memristor Analog-Grade Passive Crossbar Circuit. - Hyungjin Kim 001; Hussein Nili; Mahmood Mahmoodi; Dmitri B. Strukov (CoRR, 2019)

Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System. - Jun Tae Jang; Jungi Min; Yeongjin Hwang; Sung-Jin Choi; Dong Myong Kim; Hyungjin Kim 001; Dae Hwan Kim (IEEE Access, 2020)

Selected Bit-Line Current PUF: Implementation of Hardware Security Primitive Based on a Memristor Crossbar Array. - Dayoung Kim; Tae-Hyeon Kim; Yun-Yeong Choi; Geun-Ho Lee; Jungwon Lee; Wookyung Sun; Byung-Gook Park; Hyungjin Kim 001; Hyungsoon Shin (IEEE Access, 2021)

4-bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random-Access Memory Crossbar Array. - Sungjoon Kim; Jinwoo Park; Tae-Hyeon Kim; Kyungho Hong; Yeongjin Hwang; Byung-Gook Park; Hyungjin Kim 001 (Adv. Intell. Syst., 2022)

Memristor Crossbar Circuit for Ternary Content-Addressable Memory with Fine-Tuning Operation. - Sangwook Youn; Sungjoon Kim; Tae-Hyeon Kim; Jinwoo Park; Hyungjin Kim 001 (Adv. Intell. Syst., 2023)

Optimization of Random Telegraph Noise Characteristics in Memristor for True Random Number Generator. - Min Suk Song; Tae-Hyeon Kim; Hwiho Hwang; Suhyeon Ahn; Hussein Nili; Hyungjin Kim 001 (Adv. Intell. Syst., 2023)

Threshold learning algorithm for memristive neural network with binary switching behavior. - Sangwook Youn; Yeongjin Hwang; Tae-Hyeon Kim; Sungjoon Kim; Hwiho Hwang; Jinwoo Park; Hyungjin Kim 001 (Neural Networks, 2024)

Overshoot-Suppressed Memristor Array with AlN Oxygen Barrier for Low-Power Operation in the Intelligent Neuromorphic Systems. - Sungjoon Kim; Kyungho Hong; Hyungjin Kim 001; Min-Hwi Kim; Woo Young Choi (Adv. Intell. Syst., 2024)