Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors. - Marc Aoulaiche; Eddy Simoen; Romain Ritzenthaler; Tom Schram; Hiroaki Arimura; Moonju Cho; Thomas Kauerauf; Guido Groeseneken; Naoto Horiguchi; Aaron Thean; Antonio Federico; Felice Crupi; et al. (ESSDERC, 2013)

A Fully Integrated IEEE 802.15.4/4z-Compliant UWB System-on-Chip RF Transceiver Supporting Precision Positioning in a CMOS 28-nm Process. - Wan Kim; Hyun-Gi Seok; Geunhaeng Lee; Sinyoung Kim; Jae-Keun Lee; Chanho Kim; Wonkang Kim; Wonjun Jung; Youngsea Cho; Seungyong Bae; Jongpil Cho; Hyuokju Na; et al. (IEEE J. Solid State Circuits, 2023)