Hybrid graphene-silicon photonics devices. - Dries Van Thourhout; Yingtao Hu; Marianna Pantouvaki; Koen Alexander; Bart Kuyken; Steven Brems; Inge Asselberghs; Cedric Huyghebaert; Chiara Alessandri; Philippe Absil; Joris Van Campenhout (ECOC, 2015)

WS2 transistors on 300 mm wafers with BEOL compatibility. - Tom Schram; Quentin Smets; Benjamin Groven; M. H. Heyne; E. Kunnen; A. Thiam; Katia Devriendt; Annelies Delabie; Dennis Lin; M. Lux; Daniele Chiappe; I. Asselberghs; et al. (ESSDERC, 2017)

Broadband 20 Gbit/s Graphene-Si Electro-Absorption Modulator. - Chiara Alessandri; Inge Asselberghs; Yoojin Ban; Steven Brems; Cedric Huyghebaert; Joris Van Campenhout; Dries Van Thourhout; Marianna Pantouvaki (ECOC, 2018)

Tunnel FETs using Phosphorene/ReS2 heterostructures. - Yashwanth Balaji; Quentin Smets; Dennis Lin; I. Asselberghs; Iuliana P. Radu; Guido Groeseneken (DRC, 2019)

4-Channel C-Band WDM Transmitter Based on 10 GHz Graphene-Silicon Electro-Absorption Modulators. - Chiara Alessandri; Inge Asselberghs; Peter De Heyn; Steven Brems; Cedric Huyghebaert; Joris Van Campenhout; Dries Van Thourhout; Marianna Pantouvaki (OFC, 2019)

On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation. - Dennis Lin; Xiangyu Wu; Vivek Mootheri; Daire Cott; Benjamin Groven; Pierre Morin; Inge Asselberghs; Iuliana P. Radu (DRC, 2021)

Analysis of BTI in 300 mm integrated dual-gate WS2 FETs. - L. Panarella; Quentin Smets; Devin Verreck; Tom Schram; Daire Cott; I. Asselberghs; Ben Kaczer (DRC, 2022)

Challenges and targets of MRAM-enabled scaled spintronic logic circuits. - Fanfan Meng; Florin Ciubotaru; S.-Y. Lee; Odysseas Zografos; M. Gupta; Van D. Nguyen; Sebastien Couet; Gouri Sankar Kar; Giovanni De Micheli; Christoph Adelmann; I. Asselberghs (CoRR, 2022)

Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs. - L. Panarella; Ben Kaczer; Quentin Smets; Devin Verreck; Tom Schram; Daire Cott; Dennis Lin; Stanislav Tyaginov; I. Asselberghs; Cesar J. Lockhart de la Rosa; Gouri Sankar Kar; Valeri Afanas'ev (IRPS, 2023)

The Promise of 2-D Materials for Scaled Digital and Analog Applications. - Devin Verreck; Piet Wambacq; Maarten Van De Put; Zubair Ahmed; Quentin Smets; Aryan Afzalian; Rutger Duflou; Xiangyu Wu; Gioele Mirabelli; Rongmei Chen; Inge Asselberghs; Gouri Sankar Kar (ISSCC, 2023)

Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer. - Souvik Ghosh 001; Quentin Smets; S. Banerjee; Tom Schram; Koen Kennes; R. Verheyen; P. Kumar; M.-E. Boulon; Benjamin Groven; H. M. Silva; Shreya Kundu; Daire Cott; et al. (VLSI Technology and Circuits, 2023)

Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach. - Shreya Kundu; D. H. van Doip; Tom Schram; Quentin Smets; S. Banerjee; Benjamin Groven; Daire Cott; Stefan Decoster; P. Bezard; F. Lazzarino; K. Banerjee; Souvik Ghosh 001; et al. (VLSI Technology and Circuits, 2023)

EOT Scaling Via 300mm MX2 Dry Transfer - Steps Toward a Manufacturable Process Development and Device Integration. - S. Ghosh; A. Kruv; Quentin Smets; Tom Schram; D. J. Leech; T. Ding; V. Turkani; Benjamin Groven; A. Dangel; G. Probst; Thomas Uhrmann; Markus Wimplinger; et al. (VLSI Technology and Circuits, 2024)

Benchmarking of Scaled Majority-Logic-Synthesized Spintronic Circuits Based on Magnetic Tunnel Junction Transducers. - Fanfan Meng; Siang-Yun Lee; Odysseas Zografos; Mohit Gupta 004; Van D. Nguyen; Giovanni De Micheli; Sorin Cotofana; Inge Asselberghs; Christoph Adelmann; Gouri Sankar Kar; Sebastien Couet; Florin Ciubotaru (IEEE Trans. Circuits Syst. I Regul. Pap., 2025)