erformance Optimization Of 60 Nm Channel Length Vertical Mosfets Using Channel Engineering. - G. Shrivastav; S. Mahapatra; V. Ramgopal Rao; J. Vasi; K. G. Anil; C. Fink; Walter Hansch; I. Eisele (VLSI Design, 2001)

Nitrogen implantations for rapid thermal oxinitride layers. - A. Stadler; I. Genchev; A. Bergmaier; G. Dollinger; Vesselinka Petrova-Koch; Walter Hansch; H. Baumgärtner; I. Eisele (Microelectron. Reliab., 2001)