Exploring the border traps near the SiO2-SiC interface using conductance measurements. - P. Kumar; M. Krummenacher; H. G. Medeiros; S. Race; P. Natzke; I. Kovacevic-Badstübner; M. E. Bathen; U. Grossner (IRPS, 2024)

On How to Implement Experimentally Obtained Defect Characteristics in SiC Device Simulation. - H. G. Medeiros; A. K. Brandl; P. Kumar; H. Scriba; S. Vuillemin; S. Race; I. Kovacevic-Badstübner; M. E. Bathen; U. Grossner (IRPS, 2025)