Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures. - I. P. Tyagulskyy; I. N. Osiyuk; V. S. Lysenko; A. N. Nazarov; Steve Hall; Octavian Buiu; Y. Lu; Richard Potter; Paul R. Chalker (Microelectron. Reliab., 2007)