Bias Temperature Instability Depending on Body Bias through Buried Oxide (BOX) Layer in a 65 nm Fully-Depleted Silicon-On-Insulator Process. - Ryo Kishida; Ikuo Suda; Kazutoshi Kobayashi (IRPS, 2021)

An Aging Degradation Suppression Scheme at Constant Performance by Controlling Supply Voltage and Body Bias in a 65 nm Fully-Depleted Silicon-On-Insulator Process. - Ikuo Suda; Ryo Kishida; Kazutoshi Kobayashi (IRPS, 2022)