Modeling of Triangular Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory. - Woo Young Choi; Min Su Han; Boram Han; Dongsun Seo; Il Hwan Cho (IEICE Trans. Electron., 2013)

Fabrication and Characterization of a Fully Si Compatible Forming-Free GeOxResistive Switching Random-Access Memory. - Jae Yoon Lee; Youngmin Kim; Ikhyeon Kworn; Il Hwan Cho; Jae Yeon Lee; Soo Gil Kim; Seongjae Cho (DRC, 2018)

Investigation of Poly Silicon Channel Variation in Vertical 3D NAND Flash Memory. - Inyoung Lee; Dae Hwan Kim; Daewoong Kang; Il Hwan Cho (IEEE Access, 2022)

3D NAND Flash Memory Cell Current and Interference Characteristics Improvement With Multiple Dielectric Spacer. - Yun-Jae Oh; Inyoung Lee; Yunejae Suh; Daewoong Kang; Il Hwan Cho (IEEE Access, 2023)