A Single-Ended Offset-Compensating Bit-Line Sense-Amplifier with Ground Precharge and Charge Transfer Pre sensing for Sub-1V DRAM. - Changyoung Lee; Youngseok Park; Hyunchul Yoon; Seryeong Yoon; Donggeon Kim; Bokyeon Won; Junhwa Song; In-Jae Bae; Jaejoon Song; Kyuchang Kang; Jaehyuk Kim; Kyungrak Cho; et al. (A-SSCC, 2024)

Improvement of IGZO BTI for DRAM Cell application by heat treatment and recovery effect. - Changsik Kim; Jongmoo Lee; Jihee Jun; Chanhee Han; In-Jae Bae; Youngkwan Park; Hana Cho; Hyeontae Kim; Dongsik Park; Heonjun Ha; Jaejoon Song; Changsik Yoo; et al. (IRPS, 2025)