A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology. - Ki-Tae Park; Ohsuk Kwon; Sangyong Yoon; Myung-Hoon Choi; In-Mo Kim; Bo-Geun Kim; Min-Seok Kim; Yoon-Hee Choi; Seung-Hwan Shin; Youngson Song; Joo-Yong Park; Jae-Eun Lee; et al. (ISSCC, 2011)

7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate. - Jae-Woo Im; Woopyo Jeong; Doo-Hyun Kim; Sangwan Nam; Dong-Kyo Shim; Myung-Hoon Choi; Hyun-Jun Yoon; Dae-Han Kim; Youse Kim; Hyun Wook Park; Dong-Hun Kwak; Sang-Won Park; et al. (ISSCC, 2015)

7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers. - Dongku Kang; Woopyo Jeong; Chulbum Kim; Doo-Hyun Kim; Yong-Sung Cho; Kyung-Tae Kang; Jinho Ryu; Kyung-Min Kang; Sungyeon Lee; Wandong Kim; Hanjun Lee; Jaedoeg Yu; et al. (ISSCC, 2016)

A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate. - Woopyo Jeong; Jae-Woo Im; Doo-Hyun Kim; Sangwan Nam; Dong-Kyo Shim; Myung-Hoon Choi; Hyun-Jun Yoon; Dae-Han Kim; Youse Kim; Hyun Wook Park; Dong-Hun Kwak; Sang-Won Park; et al. (IEEE J. Solid State Circuits, 2016)

11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory. - Chulbum Kim; Ji-Ho Cho; Woopyo Jeong; Il-Han Park; Hyun Wook Park; Doo-Hyun Kim; Daewoon Kang; Sunghoon Lee; Ji-Sang Lee; Wontae Kim 004; Jiyoon Park; Yang-Lo Ahn; et al. (ISSCC, 2017)

256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers. - Dongku Kang; Woopyo Jeong; Chulbum Kim; Doo-Hyun Kim; Yong-Sung Cho; Kyung-Tae Kang; Jinho Ryu; Kyung-Min Kang; Sungyeon Lee; Wandong Kim; Hanjun Lee; Jaedoeg Yu; et al. (IEEE J. Solid State Circuits, 2017)

A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface. - Jiho Cho; D. Chris Kang; Jongyeol Park; Sangwan Nam; Jung-Ho Song; Bong-Kil Jung; Jaedoeg Lyu; Hogil Lee; Won-Tae Kim 004; Hongsoo Jeon; Sunghoon Kim 001; In-Mo Kim; et al. (ISSCC, 2021)

30.1 A 28Gb/mm24XX-Layer 1Tb 3b/Cell WF-Bonding 3D-NAND Flash with 5.6Gb/s/Pin IOs. - Sang-Soo Park; Jaedoeg Lyu; Myungjun Kim; Jaeyun Lee; Youngsun Song; Chungho Yu; Makoto Hirano; Yongseok Kwon; Jonghoon Park; Hojoon Kim; Daein Lee; Donghyun Seo; et al. (ISSCC, 2025)