A 1.2V 30nm 3.2Gb/s/pin 4Gb DDR4 SDRAM with dual-error detection and PVT-tolerant data-fetch scheme. - Kyomin Sohn; Taesik Na; Indal Song; Yong Shim; Wonil Bae; Sanghee Kang; Dongsu Lee; Hangyun Jung; Hanki Jeoung; Ki Won Lee; Junsuk Park; Jongeun Lee; et al. (ISSCC, 2012)

A 1.2 V 30 nm 3.2 Gb/s/pin 4 Gb DDR4 SDRAM With Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme. - Kyomin Sohn; Taesik Na; Indal Song; Yong Shim; Wonil Bae; Sanghee Kang; Dongsu Lee; Hangyun Jung; Seok-Hun Hyun; Hanki Jeoung; Ki Won Lee; Jun-Seok Park; et al. (IEEE J. Solid State Circuits, 2013)

Design technologies for a 1.2V 2.4Gb/s/pin high capacity DDR4 SDRAM with TSVs. - Reum Oh; Byunghyun Lee; Sang-Woong Shin; Wonil Bae; Hundai Choi; Indal Song; Yun-Sang Lee; Jung-Hwan Choi; Chi-Wook Kim; Seong-Jin Jang; Joo-Sun Choi (VLSIC, 2014)

17.7 A digital DLL with hybrid DCC using 2-step duty error extraction and 180° phase aligner for 2.67Gb/S/pin 16Gb 4-H stack DDR4 SDRAM with TSVs. - Won-Joo Yun; Indal Song; Hanki Jeoung; Hundai Choi; Seok-Ho Lee; Jun-Bae Kim; Chi-Wook Kim; Jung-Hwan Choi; Seong-Jin Jang; Joo-Sun Choi (ISSCC, 2015)

Design of non-contact 2Gb/s I/O test methods for high bandwidth memory (HBM). - Hyunui Lee; Sukyong Kang; Hye-Seung Yu; Won-Joo Yun; Jae-Hun Jung; Sungoh Ahn; Wang-Soo Kim; Beomyong Kil; Yoo-Chang Sung; Sang-Hoon Shin; Yong-Sik Park; Yong-Hwan Kim; et al. (A-SSCC, 2016)

Dual-loop 2-step ZQ calibration for dedicated power supply voltage in LPDDR4 SDRAM. - Chang-Kyo Lee; Junha Lee; Kiho Kim; Jin-Seok Heo; Gil-Hoon Cha; Jin-Hyeok Baek; Daesik Moon; Yoon-Joo Eom; Tae-Sung Kim; Hyunyoon Cho; Young Hoon Son; Seonghwan Kim 002; et al. (A-SSCC, 2017)

23.2 A 5Gb/s/pin 8Gb LPDDR4X SDRAM with power-isolated LVSTL and split-die architecture with 2-die ZQ calibration scheme. - Chang-Kyo Lee; Yoon-Joo Eom; Jin-Hee Park; Junha Lee; Hye-Ran Kim; Kihan Kim; Young Choi; Ho-Jun Chang; Jonghyuk Kim; Jong-Min Bang; Seungjun Shin; Hanna Park; et al. (ISSCC, 2017)

An Enhanced Built-off-Test Transceiver with Wide-range, Self-calibration Engine for 3.2 Gb/s/pin DDR4 SDRAM. - Joung-Wook Moon; Hye-Sung Yoo; Hundai Choi; Il-Won Park; Seok-Yong Kang; Jun-Bae Kim; Haeyoung Chung; Kiho Kim; Dong-Hun Lee; Ki-Jae Song; Seok-Hun Hyun; Indal Song; et al. (A-SSCC, 2018)

A sub-0.85V, 6.4GBP/S/Pin TX-Interleaved Transceiver with Fast Wake-Up Time Using 2-Step Charging Control and VOHCalibration in 20NM DRAM Process. - Jin-Hyeok Baek; Chang-Kyo Lee; Kiho Kim; Daesik Moon; Gil-Hoon Cha; Jin-Seok Heo; Min-Su Ahn; Dong-Ju Kim; Jae-Joon Song; Seokhong Kwon; Jongmin Kim; Kyung-Soo Kim; et al. (VLSI Circuits, 2018)

Dual-Loop Two-Step ZQ Calibration for Dynamic Voltage-Frequency Scaling in LPDDR4 SDRAM. - Chang-Kyo Lee; Junha Lee; Kiho Kim; Jin-Seok Heo; Jin-Hyeok Baek; Gil-Hoon Cha; Daesik Moon; Dong-Hun Lee; Jong-Wook Park; Seunseob Lee; Si-Hyeong Cho; Young-Ryeol Choi; et al. (IEEE J. Solid State Circuits, 2018)