Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations. - Dimitri A. Antoniadis; Ingvar Åberg; Cáit Ní Chléirigh; Osama M. Nayfeh; Ali Khaki-Firooz; Judy L. Hoyt (IBM J. Res. Dev., 2006)

Transport in thin-body Metal oxide semiconductor field-effect transistors fabricated in strained silicon and strained silicon/silicon-germanium heterostructures on insulator. - Ingvar Åberg (2006)