Resilient high-temperature operation of GaN-on-SiC HEMTs with stable DC characteristics up to 600 °C. - Trupti Ranjan Lenka; Mano Bala Sankar Muthu; Injamamul Hoque Emu; Tanjim Rahman; Marshall Debenedictis; Hieu Pham Trung Nguyen (Microelectron. J., 2026)