3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat). - Kazuo Tsutsui; Kuniyuki Kakushima; Takuya Hoshii; A. Nakajima; Shinichi Nishizawa; Hitoshi Wakabayashi; Iriya Muneta; K. Sato; Tomoko Matsudai; Wataru Saito; Takuya Saraya; K. Itou; et al. (ASICON, 2017)

Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately. - Takuya Hoshii; Kazuyoshi Furukawa; Kuniyuki Kakushima; Masahiro Watanabe; Naoyuki Shigvo; Takuya Saraya; Toshihiko Takakura; Kazuo Itou; Munetoshi Fukui; Shinichi Suzuki; Kiyoshi Takeuchi; Iriya Muneta; et al. (ESSDERC, 2018)

New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment. - Kuniyuki Kakushima; Takuya Hoshii; M. Watanabe; N. Shizyo; K. Furukawa; Takuya Saraya; T. Takakura; K. Itou; M. Fukui; S. Suzuki; Ken Takeuchi; Iriya Muneta; et al. (VLSI Circuits, 2018)