ESD sensitivity of a GaAs MMIC microwave power amplifier. - Augusto Tazzoli; Isabella Rossetto; Enrico Zanoni; Dai Yufeng; Tiziana Tomasi; Gaudenzio Meneghesso (Microelectron. Reliab., 2011)

Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits. - Isabella Rossetto; Matteo Meneghini; Tiziana Tomasi; Dai Yufeng; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2012)

Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics. - Isabella Rossetto; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2013)

Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate. - Isabella Rossetto; Fabiana Rampazzo; Riccardo Silvestri; Alberto Zanandrea; Christian Dua; Sylvain L. Delage; Mourad Oualli; Matteo Meneghini; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2013)

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences. - Isabella Rossetto; Fabiana Rampazzo; Simone Gerardin; Matteo Meneghini; Marta Bagatin; Alberto Zanandrea; Alessandro Paccagnella; Gaudenzio Meneghesso; Enrico Zanoni; Christian Dua; Marie-Antoinette di Forte-Poisson; Raphael Aubry; et al. (ESSDERC, 2014)

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs. - Isabella Rossetto; Fabiana Rampazzo; Matteo Meneghini; Marco Silvestri; Christian Dua; Piero Gamarra; Raphael Aubry; Marie-Antoinette di Forte-Poisson; O. Patard; Sylvain L. Delage; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2014)

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. - Davide Bisi; Antonio Stocco; Isabella Rossetto; Matteo Meneghini; Fabiana Rampazzo; Alessandro Chini; Fabio Soci; Alessio Pantellini; Claudio Lanzieri; Piero Gamarra; Cedric Lacam; M. Tordjman; et al. (Microelectron. Reliab., 2015)

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs. - Isabella Rossetto; Matteo Meneghini; Davide Bisi; Alessandro Barbato; Marleen Van Hove; Denis Marcon; Tian-Li Wu; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2015)

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. - Gaudenzio Meneghesso; Matteo Meneghini; Davide Bisi; Isabella Rossetto; Tian-Li Wu; Marleen Van Hove; Denis Marcon; Steve Stoffels; Stefaan Decoutere; Enrico Zanoni (Microelectron. Reliab., 2016)

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. - Matteo Meneghini; Oliver Hilt; Clément Fleury; Riccardo Silvestri; Mattia Capriotti; Gottfried Strasser; Dionyz Pogany; Eldad Bahat-Treidel; Frank Brunner; A. Knauer; Joachim Würfl; Isabella Rossetto; et al. (Microelectron. Reliab., 2016)

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. - Isabella Rossetto; Matteo Meneghini; Vanessa Rizzato; Maria Ruzzarin; Andrea Favaron; Steve Stoffels; Marleen Van Hove; Niels Posthuma; Tian-Li Wu; Denis Marcon; Stefaan Decoutere; Gaudenzio Meneghesso; et al. (Microelectron. Reliab., 2016)

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. - Isabella Rossetto; Matteo Meneghini; Eleonora Canato; Marco Barbato; Steve Stoffels; Niels Posthuma; Stefaan Decoutere; Andrea Natale Tallarico; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2017)

Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. - Alaleh Tajalli; Matteo Meneghini; Isabella Rossetto; Peter Moens; Abhishek Banerjee 003; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2017)

On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach. - Mirco Boito; Manuel Fregolent; Carlo De Santi; A. Abbisogni; S. Smerzi; Isabella Rossetto; Ferdinando Iucolano; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2024)

Evidence for Avalanche Operation in Sub-Micrometer Power GaN HEMTs with p-GaN Gate. - Riccardo Fraccaroli; Matteo Dell'Andrea; Manuel Fregolent; Mirco Boito; Carlo De Santi; Gaudenzio Meneghesso; Enrico Zanoni; Eleonora Canato; Isabella Rossetto; Alessio Pirani; Giansalvo Pizzo; Cristina Miccoli; et al. (IRPS, 2025)