Iuliana P. Radu

Orcid: 0000-0002-7230-7218

Affiliations:
  • Inter-University Micro-Electronics Center (Imec), Leuven, Belgium


According to our database1, Iuliana P. Radu authored at least 28 papers between 2014 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
Scaled contact length with low contact resistance in monolayer 2D channel transistors.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Building high performance transistors on carbon nanotube channel.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Comprehensive 300 mm process for Silicon spin qubits with modular integration.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

How Fault-Tolerant Quantum Computing Benefits from Cryo-CMOS Technology.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

MOSFET Characterization with Reduced Supply Voltage at Low Temperatures for Power Efficiency Maximization.
Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022
Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Perspective on Low-dimensional Channel Materials for Extremely Scaled CMOS.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS2 Transistor.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Scalable 1.4 μW cryo-CMOS SP4T multiplexer operating at 10 mK for high-fidelity superconducting qubit measurements.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2021
Uniform Spin Qubit Devices with Tunable Coupling in an All-Silicon 300 mm Integrated Process.
Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021


Circuit Model for the Efficient Co-Simulation of Spin Qubits and their Control & Readout Circuitry.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation.
Proceedings of the Device Research Conference, 2021

Circuit models for the co-simulation of superconducting quantum computing systems.
Proceedings of the Design, Automation & Test in Europe Conference & Exhibition, 2021

2020
Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Reconfigurable nanoscale spin wave majority gate with frequency-division multiplexing.
CoRR, 2019

Tunnel FETs using Phosphorene/ReS2 heterostructures.
Proceedings of the Device Research Conference, 2019

2018
Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors.
Proceedings of the 76th Device Research Conference, 2018

Spin-based majority gates for logic applications.
Proceedings of the 76th Device Research Conference, 2018

Towards high-performance polarity-controllable FETs with 2D materials.
Proceedings of the 2018 Design, Automation & Test in Europe Conference & Exhibition, 2018

2017
WS2 transistors on 300 mm wafers with BEOL compatibility.
Proceedings of the 47th European Solid-State Device Research Conference, 2017

Tunneling transistors based on MoS2/MoTe2 Van der Waals heterostructures.
Proceedings of the 47th European Solid-State Device Research Conference, 2017

Material selection and device design guidelines for two-dimensional materials based TFETs.
Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016
Non-volatile spin wave majority gate at the nanoscale.
CoRR, 2016

Effect of material parameters on two-dimensional materials based TFETs: An energy-delay perspective.
Proceedings of the ESSCIRC Conference 2016: 42<sup>nd</sup> European Solid-State Circuits Conference, 2016

2015
Area and routing efficiency of SWD circuits compared to advanced CMOS.
Proceedings of the 2015 International Conference on IC Design & Technology, 2015

2014
System-level assessment and area evaluation of Spin Wave logic circuits.
Proceedings of the IEEE/ACM International Symposium on Nanoscale Architectures, 2014


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