Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate. - Stanislav Tyaginov; Viktor Sverdlov; Ivan A. Starkov; Wolfgang Gös; Tibor Grasser (Microelectron. Reliab., 2009)

Interface traps density-of-states as a vital component for hot-carrier degradation modeling. - Stanislav Tyaginov; Ivan A. Starkov; Oliver Triebl; Johann Cervenka; C. Jungemann; Sara Carniello; Jong Mun Park; Hubert Enichlmair; Markus Karner; Ch. Kernstock; Ehrenfried Seebacher; Rainer Minixhofer; et al. (Microelectron. Reliab., 2010)

An analytical approach for physical modeling of hot-carrier induced degradation. - Stanislav Tyaginov; Ivan A. Starkov; Hubert Enichlmair; C. Jungemann; Jong Mun Park; Ehrenfried Seebacher; R. L. de Orio; Hajdin Ceric; Tibor Grasser (Microelectron. Reliab., 2011)

A Semi-numerical Approach to Radiation Boundary Conditions. - Ivan A. Starkov; Alexander S. Starkov (NMA, 2014)

Investigation of the threshold voltage turn-around effect in long-channel n-MOSFETs due to hot-carrier stress. - Ivan A. Starkov; Alexander S. Starkov (Microelectron. Reliab., 2014)

Velocity of viscous fingers in miscible displacement: Comparison with analytical models. - Fedor Bakharev; Alexsandr Enin; A. Groman; A. Kalyuzhnyuk; S. Matveenko; Yulia Petrova; Ivan A. Starkov; Sergey Tikhomirov (J. Comput. Appl. Math., 2022)

The non-monotonicity of growth rate of viscous fingers in heterogeneous porous media. - Ivan A. Starkov; D. A. Pavlov; Sergey Tikhomirov; Fedor Bakharev (CoRR, 2023)