Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si1 - xGex Heterostructures. - F. Gámiz; Juan Bautista Roldán; J. A. López-Villanueva (VLSI Design, 1998)

A β-SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization. - F. Gámiz; Juan Bautista Roldán; J. A. López-Villanueva (VLSI Design, 1998)

Development of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs. - Juan Bautista Roldán; F. Gámiz; J. A. López-Villanueva (VLSI Design, 1998)

Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization. - Juan Bautista Roldán; F. Gámiz; J. A. López-Villanueva; J. E. Carceller (VLSI Design, 1998)