Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. - Mourad Oualli; Christian Dua; O. Patard; P. Altuntas; S. Piotrowicz; Piero Gamarra; Cedric Lacam; J.-C. Jacquet; L. Teisseire; D. Lancereau; Eric Chartier; C. Potier; et al. (Microelectron. Reliab., 2018)

Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. - Zhan Gao; Francesca Chiocchetta; Carlo De Santi; Nicola Modolo; Fabiana Rampazzo; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni; Hervé Blanck; H. Stieglauer; D. Sommer; Benoit Lambert; et al. (IRPS, 2022)