Low frequency noise characterization in 0.13 mum p-MOSFETs. Impact of scaled-down 0.25, 0.18 and 0.13 mum technologies on 1/f noise. - M. Marin; Y. Akue Allogo; M. de Murcia; P. Llinares; J. C. Vildeuil (Microelectron. Reliab., 2004)

Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 mum CMOS bipolar transistors. - P. Benoit; Jérémy Raoult; C. Delseny; Fabien Pascal; L. Snadny; J. C. Vildeuil; M. Marin; B. Martinet; D. Cottin; Olivier Noblanc (Microelectron. Reliab., 2005)

N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis. - Cédric Leyris; Frédéric Martinez; Alain Hoffmann; M. Valenza; J. C. Vildeuil (Microelectron. Reliab., 2007)

Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization. - Cédric Leyris; Frédéric Martinez; M. Valenza; Alain Hoffmann; J. C. Vildeuil (Microelectron. Reliab., 2007)

Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements. - G. Néau; Frédéric Martinez; M. Valenza; J. C. Vildeuil; E. Vincent; Frédéric Boeuf; F. Payet; K. Rochereau (Microelectron. Reliab., 2007)