Comparison of metal gate electrodes on MOCVD HfO2. - Max Christian Lemme; J. K. Efavi; H. D. B. Gottlob; Thomas Mollenhauer; Thorsten Wahlbrink; Heinrich Kurz (Microelectron. Reliab., 2005)

Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-kappa dielectrics. - Stephan Abermann; J. K. Efavi; G. Sjöblom; Max Christian Lemme; Jörgen Olsson; Emmerich Bertagnolli (Microelectron. Reliab., 2007)