Avalanche breakdown capability of Power DMOS Transistors and the Wunsch-Bell relation. - A. Icaza Deckelmann; Gerhard K. M. Wachutka; Franz Hirler; J. Krumrey; R. Henninger (Microelectron. Reliab., 2003)

A novel SIMS based approach to the characterization of the channel doping profile of a trench MOSFET. - R. Zelsacher; A. C. G. Wood; E. Bacher; E. Prax; K. Sorschag; J. Krumrey; J. Baumgartl (Microelectron. Reliab., 2007)