Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature. - Fabrizio Masin; Carlo De Santi; Arno Stockman; J. Lettens; F. Geenen; Gaudenzio Meneghesso; Enrico Zanoni; Peter Moens; Matteo Meneghini (IRPS, 2022)

The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study. - Peter Moens; F. Geenen; L. De Schepper; JF Cano; J. Lettens; S. Maslougkas; J. Franchi; Martin Domeij (IRPS, 2023)