Intrinsic bonding defects in transition metal elemental oxides. - Gerald Lucovsky; H. Seo; L. B. Fleming; M. D. Ulrich; J. Lüning; Patrick Lysaght; Gennadi Bersuker (Microelectron. Reliab., 2006)

Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices. - S. Lee; J. P. Long; Gerald Lucovsky; J. L. Whitten; H. Seo; J. Lüning (Microelectron. Reliab., 2008)