Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model. - J. Pelloux-Prayer; Mikaël Cassé; François Triozon; Sylvain Barraud; Yann-Michel Niquet; J.-L. Rouviere; Olivier Faynot; Gilles Reimbold (ESSDERC, 2015)

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). - Antoine Laurent; Xavier Garros; Sylvain Barraud; J. Pelloux-Prayer; Mikaël Cassé; Fred Gaillard; X. Federspiel; David Roy 001; E. Vincent; Gérard Ghibaudo (IRPS, 2018)