Morphological and optical properties of p-type GaAs(001) layers doped with silicon. - T. E. Lamas; Sandro Martini; M. J. da Silva; A. A. Quivy; J. R. Leite (Microelectron. J., 2003)

Atomic and electronic structures of InxGa1-xN quantum dots. - C. de Oliveira; J. L. A. Alves; H. W. Leite Alves; R. A. Nogueira; J. R. Leite (Microelectron. J., 2003)

Confined excitons in Si/SrTiO3 quantum wells. - Teldo Anderson da Silva Pereira; José Alexander de King Freire; V. N. Freire; Gil de Aquino Farias; Luísa Maria Ribeiro Scolfaro; J. R. Leite; Eronides Felisberto da Silva Júnior (Microelectron. J., 2003)

Dynamical and thermodynamic properties of III-nitrides. - L. S. Pereira; A. M. Santos; J. L. A. Alves; H. W. Leite Alves; J. R. Leite (Microelectron. J., 2003)

H-band emission in single heterojunctions. - Fanyao Qu; Antônio Tadeu Lino; N. O. Dantas; Paulo César de Morais; E. C. F. da Silva; A. A. Quivy; J. R. Leite (Microelectron. J., 2003)

Coupled rate equation modeling of self-assembled quantum dot photoluminescence. - F. V. de Sales; Júnio Márcio Rosa Cruz; Sebastião William da Silva; M. A. G. Soler; Paulo César de Morais; M. J. da Silva; A. A. Quivy; J. R. Leite (Microelectron. J., 2003)

Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well. - C. S. Sergio; Guennadii Michailovich Gusev; A. A. Quivy; T. E. Lamas; J. R. Leite; O. Estibals; J. C. Portal (Microelectron. J., 2003)

Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3mum. - M. J. da Silva; Sandro Martini; T. E. Lamas; A. A. Quivy; E. C. F. da Silva; J. R. Leite (Microelectron. J., 2003)

The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot. - H. Rodríguez-Coppola; Joaquín Tutor-Sánchez; J. R. Leite; Luísa Maria Ribeiro Scolfaro; F. García-Moliner (Microelectron. J., 2004)