First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application. - K. Banerjee; Laurent Breuil; A. P. Milenin; M. Pak; J. Stiers; Sean R. C. McMitchell; L. Di Piazza; Geert Van den Bosch; Jan Van Houdt (IMW, 2021)

Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND. - Laurent Breuil; Mihaela Ioana Popovici; J. Stiers; Antonio Arreghini; S. Ramesh 005; Geert Van den Bosch; Jan Van Houdt; Maarten Rosmeulen (IMW, 2023)

Gate Side Injection Operating Mode for 3D NAND Flash Memories. - Laurent Breuil; R. Izmailov; Mihaela Ioana Popovici; J. Stiers; Antonio Arreghini; S. Ramesh; Geert Van den Bosch; Jan Van Houdt; Maarten Rosmeulen (IMW, 2024)

Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NAND. - Davide Tierno; Antonio Arreghini; Alicja Lesniewska; Y. Jeong; Marleen H. van der Veen; J. Stiers; N. Bazzazian; Ivan Ciofi; Geert Van den Bosch; Maarten Rosmeulen (IRPS, 2024)